Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions
نویسندگان
چکیده
منابع مشابه
Spin-dependent transport in molecular tunnel junctions.
We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni-octanethiol-Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the angle between the magnetic moments in the two electrodes is varied, demonstrating that low-energy electrons can traverse the molecular barrier while remaining s...
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The modelling of nanoelectronic systems has been the topic of ever increasing activity for nearly two decades. Yet, new questions, challenges and opportunities continue to emerge. In this article we review theoretical and numerical work on two new developments in the theory of molecular-scale electronics. First we review a density functional theory analysis within the Keldysh non-equilibrium Gr...
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Nuttachai Jutong,1 Ivan Rungger,2 Cosima Schuster,1 Ulrich Eckern,1 Stefano Sanvito,2 and Udo Schwingenschlögl3 1Institut für Physik, Universität Augsburg, 86135 Augsburg, Germany 2School of Physics and CRANN, Trinity College, Dublin 2, Ireland 3KAUST, PSE Division, Thuwal 23955-6900, Kingdom of Saudi Arabia (Received 9 July 2012; revised manuscript received 11 September 2012; published 12 Nove...
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Application of Bardeen’s tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin θ at constant applied voltage. 2) Whenever polarization factors ar...
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Figure 1 Schematic illustration showing the mechanism of TMR. Top: for parallel aligned magnetization as sketched at left, electrons around the Fermi level with spin up (m) and spin down (k) are allowed to tunnel from majority to majority bands, and from minority to minority bands. Bottom: when the magnetization is antiparallel, tunneling takes place from majority to minority and minority to ma...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2011
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.119.606